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NT5CB64M16AP Datasheet 1Gb DDR3 SDRAM A-Die

Manufacturer: Nanya

Download the NT5CB64M16AP datasheet PDF. This datasheet also includes the NT5CB256M4AN variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (NT5CB256M4AN-Nanya.pdf) that lists specifications for multiple related part numbers.

General Description

The 1Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 1,073,741,824 bits.

It is internally configured as an octal-bank DRAM.

The 1Gb chip is organized as 32Mbit x 4 I/O x 8, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device.

Overview

1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  1.5V ± 0.

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.75V power supply and are available in BGA packages. REV 1.2 01 / 2009 1 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Pin.