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NT5CC1024M4CN - 4Gb DDR3 SDRAM C-Die

Download the NT5CC1024M4CN datasheet PDF (NT5CB1024M4CN included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4gb ddr3 sdram c-die.

Description

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks.

Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 1 REV 1.0 04/ 2012 Free Datasheet http://www.0PDF. com 4Gb DDR.

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Note: The manufacturer provides a single datasheet file (NT5CB1024M4CN-Nanya.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5CC1024M4CN
Manufacturer Nanya
File Size 2.92 MB
Description 4Gb DDR3 SDRAM C-Die
Datasheet download datasheet NT5CC1024M4CN Datasheet

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Full PDF Text Transcription

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4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature  VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.
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