NT5CC1024M4CN Overview
Description
The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM.
Key Features
- VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)
- WRITE Latency (CWL): 5,6,7,8,9, 10 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock
- Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 Through ZQ pin (RZQ:240 ohm±1%)
