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NT5CC256M16ER - Commercial and Industrial DDR3 4Gb SDRAM

Download the NT5CC256M16ER datasheet PDF. This datasheet also covers the NT5CC512M8EQ variant, as both devices belong to the same commercial and industrial ddr3 4gb sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Basis DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM.
  • Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes.
  • Power Saving Mode - Power Down Mode.
  • Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%).
  • Signal Synchroniza.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NT5CC512M8EQ-Nanya.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5CC256M16ER
Manufacturer Nanya
File Size 3.35 MB
Description Commercial and Industrial DDR3 4Gb SDRAM
Datasheet download datasheet NT5CC256M16ER Datasheet

Full PDF Text Transcription for NT5CC256M16ER (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NT5CC256M16ER. For precise diagrams, tables, and layout, please refer to the original PDF.

DDR3-4Gb E-Die NT5CB(C)512M8EQ/NT5CB(C)256M16ER Commercial and Industrial DDR3(L) 4Gb SDRAM Features  Basis DDR3 Compliant - 8n Prefetch Architecture - Differential Cloc...

View more extracted text
 Basis DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM  Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes  Power Saving Mode - Power Down Mode  Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)  Signal Synchronization - Write Leveling via MR settings 5 - Read Leveling via MPR  Interface and Power Supply - SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V) - SSTL_1352 for