Datasheet Details
| Part number | NT5TU64M8DE |
|---|---|
| Manufacturer | Nanya |
| File Size | 2.35 MB |
| Description | 512Mb DDR2 SDRAM |
| Datasheet |
 NT5TU64M8DE Datasheet
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General Description
The 512Mbit Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits.
It is internally configured as a quad-bank DRAM.
The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device.
Key Features
- (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment and (5) an ODT (On-Die Termination) function. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a sou.