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NT5TU64M8DE - 512Mb DDR2 SDRAM

Description

The 512Mbit Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits.

It is internally configured as a quad-bank DRAM.

The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device.

Features

  • (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment and (5) an ODT (On-Die Termination) function. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a sou.

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Datasheet Details

Part number NT5TU64M8DE
Manufacturer Nanya
File Size 2.35 MB
Description 512Mb DDR2 SDRAM
Datasheet download datasheet NT5TU64M8DE Datasheet
Additional preview pages of the NT5TU64M8DE datasheet.

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NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM                                        Feature CAS Latency Frequency -3C/3CI* Speed Bins (DDR2-667-CL5) Parameter Clock Frequency Min. 125 15 15 60 45 5 3.75 3 Max. 333 70K 8 8 8 (DDR2-800-CL5) Min. 125 12.5 12.5 57.5 45 5 3.75 2.5 2.5 Max. 400 70K 8 8 8 8 (DDR2-1066-CL7) Min. 125 12.5 12.5 57.5 45 5 3.75 2.5 2.5 1.875 Max. 533 70K 8 8 8 8 8 (DDR2-1066-CL6) Min. 125 11.25 11.25 56.25 45 5 3.75 2.5 1.875 1.875 Max. 533 70K 8 8 8 8 8 tCK(Avg.) MHz ns ns ns ns ns ns ns ns ns -AC/ACI* -BE* -BD* Units tRCD  tRP  tRC  tRAS  tCK(Avg.)@CL3  tCK(Avg.)@CL4 tCK(Avg.)@CL5 tCK(Avg.)@CL6 tCK(Avg.)@CL7 *The timing specification of high speed bin is backward compatible with low speed bin z z z 1.8V ± 0.
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