2N3684 Overview
Description
The 2N3684/PN3684 thru 2N3687/PN3687 series of N-channei JFETs is characterized for general purpose small signal amplifier applications requiring low noise and tightly specified IpsS ranges. Gate-Drain or Gate-Source Voltage (Nottee 2) Gate Current or Drain Current -50V 50 mA Total Device Dissipation (Derate 2 mW/°C to 175°C) 350 mW Storage Temperature Range 2N Series PN Series -65° Cto+200°C -65° C to +150°C Lead Temperature (1/16" from case for 10 seconds) 300°C TO-72 2N Series TO-92 PN Series ™-,.„ »m,™ n II 416-1Ml, , s ,„ inn , PIN FET 1 S 2 D 3 G 4 Case PIN FET 1 G 2 S 3 D PARAMETER CONDITIONS 2N3684/ PN3684 2N3685/ PN3685 2N3686/ PN3686 IGSS Gate Reverse Current VGS--30V, V DS = BVGSS Gate-Source Breakdown Voltage IG = -1 ^A, V DS =0 Gate-Source Cutoff v GS(off) Voltage Saturation Drain Current Drain-Source ON Resistance VDS=20V,I D = 1 nA V DS =20V, V GS =0 V D s = 0V, Vqs = 0- (Note 1) Common-Source Forward Transconductance, (Note 3i Common-Source Output Conductance Common-Source Reverse Transfer Capacitance V DS =20V, V G S = Common-Source Input Capacitance Equivalent Short-Circuit Input Spot Noise Voltage Noise Figure v D s= iov, v G s = o V DS - 10V, V G S = 0- R gen = 10M - BW - 6 Hz Note 1 Note 2 Note 3 Not JEDEC registered data.
