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n-channel JFETs
designed for • • •
• Low Noise Amplifiers • Choppers • Switches
H
Performance Curves NFA See Section 4
BENEFITS
• Operates from High Supply Voltages BVGSS>50V
*ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage (Note 2) Gate Current or Drain Current Total Device Dissipation
(Derate 2 mWrC to 175°C) Storage Temperature Range
-50 V 50 mA
350 mW -65 to +200° C
TO-72 See Section 5
G4:
lG ~
s
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1
"2
-
3S T
-A 4T
1 - 'C
5 l-
6
IGSS BVGSS VGS(off) lOSS rDSlon)
Gate Reverse Current
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage
Saturation Dram Current
Orain-Source ON Resistance (Note 1)
7 9ts
1-
8
9o>
1- 0
9
y N
Crss
I-A
,10 M Ciss
I-c
11 '0
1-
12 NF
Common-Source
2N3684 Datasheet
