📁 Similar Datasheet
Part Number
Description
Manufacturer
2N5358
Silicon N-channel junction field-effect transistors
ETC
2N5354
PNP Silicon Transistor
ETC
2N5355
PNP Transistor
New Jersey Semi-Conductor
2N5355
PNP Silicon Transistor
ETC
2N5356
PNP Transistor
New Jersey Semi-Conductor
Other Datasheets by National Semiconductor (now Texas Instruments)
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a
Process 55
2N5358-60 N-Channel JFETs
General Description
The 2N5358 thru 2N5360 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring tightly specified IdSS ranges.
Absolute Maximum Ratings (25°o
Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation
(25°C Free-Air Temperature) Power Derating (to +1 75°C) Storage Temperature Range Operating Temperature Range Lead Temperature (1/16" from case
for 10 seconds)
-40V
10 mA
300 mW
2 mW/°C -65°C to+200°C -65°Cto+175°C
300° C
TO-72
0.175-0.195 (4.445-4.953)
SEATING PLANE
0.209 D230 5.8«)
0.170 -0210 (4.318 -5J34)
i
0.D16-0.Q19 (0 .406-0.483)
T
11
y
•
u
D 0. .
0.03Q
MAX
1 0.500
|
(12.70) » MIN
- 0050
(U7D)
100
""" f2~. 540)
v T —
(s'©
— -0
^N
3
I
45- y
0.036-0.
2N5358 Datasheet
