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AM291 - Monolithic N-Channel Junction FET Switches

Download the AM291 datasheet PDF. This datasheet also covers the AM281 variant, as both devices belong to the same monolithic n-channel junction fet switches family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices combine N-channel junction FETs and bipolar transistors on a single chip for the first time in a new N-channel Bi-FET process.

FET analog switch.

Key Features

  • Interfaces with standard DTL, TTL and CMOS Constant "ON" resistance with signals to i10V 00 "ON" resistance match 2 i~l typ "OFF" isolation and crosstalk less than.
  • 60 dB at 10 MHz (typ) tON'tOFF = 105 ns/95 ns typ 00 Break-before-make action Ol.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AM281-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AM2910 Microprogram Controller AMD
AM2910A Microprogram Controller AMD
AM29112 High Performance 8 Bit Slice Microprogram Sequencer AMD
AM29114 Real-Time Interrupt Controller AMD
AM29116 High Performance 16 Bit Bipolar Microprocessor AMD

Other Datasheets by National Semiconductor (now Texas Instruments)

Part Number Description
AM290 Monolithic N-Channel Junction FET Switches
AM2009 six channel MOS multiplex switches
AM2009C 6-Channel MOS Multiplex Switches
AM281 Monolithic N-Channel Junction FET Switches
AM282 Monolithic N-Channel Junction FET Switches

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
00 > Monolithic N-Channel Junction FET Switches With High Speed Drivers 00 AM181/AM281, AM182/AM282 dual driver with SPST switches rO AM184/AM284, AM185/AM285 dual driver with DPST switches AM187/AM287, AM 188/ AM 288 single driver with SPDT switches AM190/AM290, AM191/AM291 dual driver with SPDT switches General Description These devices combine N-channel junction FETs and bipolar transistors on a single chip for the first time in a new N-channel Bi-FET process. This technology provides the industry's only low "ON" resistance, high speed, monolithic N-channel junction FET analog switch. Unique circuit techniques are employed to achieve break-before-make switching action and constant "ON" resistance over the analog voltage range.