Description
The CD4007M CD4007C consists of three complementary pairs of N- and P-channel enhancement mode MOS transistors suitable for series shunt applications All inputs are protected from static discharge by diode clamps to VDD and VSS
For proper operation the voltages at all pins must be constrained to be
Features
- Y Wide supply voltage range Y High noise immunity
Connection Diagram
Dual-In-Line Package
February 1988
3 0V to 15V 0 45 VCC (typ )
Top View
Note All P-channel substrates are connected to VDD and all N-channel substrates are connected to VSS
Order Number CD4007
TL F 5943.
- 1
C1995 National Semiconductor Corporation TL F 5943
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings (Note 1)
If Military Aerospace specified devices are required please contact the National Semiconductor.
CD4007C Datasheet
