DS75325 Datasheet | National Semiconductor

Description The DS75325 is a monolithic memory driver which features high current outputs as well as internal decoding of logic inputs This circuit is designed for use with magnetic memories The circuit contains two 600 m A sink-switch pairs and two 600 m A source-switch pairs Inputs A and B determine source selection while the source strobe (S1) allows the selected source turn on In the same manner inputs C and D determine sink selection while the sink strobe (S2) allows the selected sink turn on Sink-output collectors feature an internal pull-up resistor in parallel with a clamping diode connected to VCC2 This protects the outputs from voltage surges associated with switching inductive loads The source stage features Node R which allows extreme flexibility in source current selection by controlling the amount of base drive to each source transistor This method of setting the base drive brings the power associated with the resistor outside the package thereby allowing the circuit to operate at higher source currents for a given junction temperature If this method of source current setting is not desired then Nodes R and RINT can be shorted externally activating an internal resistor connected from VCC2 to Node R This provides adequate base drive for source currents up to 375 m A with VCC2 e 15V or 600 m A with VCC2 e 24V Features Y Y Y Y Y Y Y 600 m A output capability 24V output capability Dual sink and dual source outputs Fast switching times Source base drive externally adjustable Input clamping diodes TTL patible Connection Diagram Dual-In-Line Package Truth Table Address Inputs Source Sink A B C D L H X X H L X X X X L H X X H L X X X X H H H H Strobe Inputs Source Sink S1 S2 L H L H H L H L H H X X Outputs Source Sink W X Y Z ON OFF OFF OFF OFF ON OFF OFF OFF OFF ON OFF OFF OFF OFF ON OFF OFF OFF OFF OFF OFF OFF OFF H e High Level L e Low Level X e Irrelevant Note Not more than one output is to be on at any one time TL F 9755 - 2 Top View Order Number...