LF357 Datasheet | National Semiconductor

Description These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or mon-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. n Logarithmic amplifiers n Photocell amplifiers n Sample and Hold circuits mon Features n Low input bias current: 30p A n Low Input Offset Current: 3p A n High input impedance: 1012Ω n Low input noise current: n High mon-mode rejection ratio: n Large dc voltage gain: 106 d B 100 d B Features Advantages n Replace expensive hybrid and module FET op amps n Rugged JFETs allow blow-out free handling pared with MOSFET input devices n Excellent for low noise applications using either high or low source impedance - very low 1/f corner n Offset adjust does not degrade drift or mon-mode rejection as in most monolithic amplifiers n New output stage allows use of large capacitive loads (5,000 p F) without stability problems n Internal pensation and large differential input voltage capability Unmon Features LF155/ LF355 j Extremely LF156/ LF256/ LF356 1.5 LF257/ LF357 (AV =5) 1.5 Units µs fast settling time to 0.01% j Fast slew 5 2.5 20 12 5 12 50 20 12 V/µs MHz rate j Wide gain Applications n n n n Precision high speed integrators Fast D/A and A/D converters High impedance buffers Wideband, low noise, low drift amplifiers bandwidth j Low input noise voltage Simplified Schematic - 3p F in LF357 series. .. BI-FET™, BI-FET II™ are trademarks of National Semiconductor Corporation. © 2001 National Semiconductor Corporation DS005646 .national. .. LF155/LF156/LF256/LF257/LF355/LF356/LF357 Absolute Maximum Ratings (Note 1) If...