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LF357 Datasheet PDF

National Semiconductor LF357

The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
Part No. LF357
Datasheet LF357 Download
Manufacturer
National Semiconductor
Description Series Monolithic JFET Input Operational Amplifiers
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LF357 datasheet page 1 preview

GENERAL DESCRIPTION

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. n Logarithmic amplifiers n Photocell amplifiers n Sample and Hold circuits Common

FEATURES

n Low input bias current: 30pA n Low Input Offset Current: 3pA n High input impedance: 1012Ω n Low input noise current: n High common-mode rejection ratio: n Large dc voltage gain: 106 dB 100 dB

FEATURES

Advantages n Replace expensive hybrid and module FET op amps n Rugged JFETs allow blow-out free handling compared with MOSFET input devices n Excellent for low noise applications using either high or low source impedance — very low 1/f corner n Offset adjust does not degrade drift or common-mode rejection as in...
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