LF357 Datasheet | Texas Instruments

Features - 1 Advantages - Replace Expensive Hybrid and Module FET Op Amps - Rugged JFETs Allow Blow-Out Free Handling pared With MOSFET Input Devices - Excellent for Low Noise Applications Using Either High or Low Source Impedance- Very Low 1/f Corner - Offset Adjust Does Not Degrade Drift or mon-Mode Rejection as in Most Monolithic Amplifiers - New Output Stage Allows Use of Large Capacitive Loads (5,000 p F) Without Stability Problems - Internal pensation and Large Differential Input Voltage Capability - mon Features - Low Input Bias Current: 30 p A - Low Input Offset Current: 3 p A - High Input Impedance: 1012 Ω - Low Input Noise Current: 0.01 p A/√Hz - High mon-Mode Rejection Ratio: 100 d B - Large DC Voltage Gain: 106 d B - Unmon Features - Extremely Fast Settling Time to 0.01%: - 4 μs for the LFx55 devices - 1.5 μs for the LFx56 - 1.5 μs for the LFx57 (AV = 5) - Fast Slew Rate: - 5 V/µs for the LFx55 - 12 V/µs for the LFx56 - 50 V/µs for the LFx57 (AV = 5) - Wide Gain Bandwidth: - 2.5 MHz for the LFx55 devices - 5 MHz for the LFx56 - 20 MHz for the LFx57 (AV = 5) - Low Input Noise Voltage: - 20 n V/√Hz for the LFx55 - 12 n V/√Hz for the LFx56 - 12 n V/√Hz for the LFx57 (AV = 5) 2 Applications - Precision High-Speed Integrators - Fast D/A and A/D Converters - High Impedance Buffers - Wideband, Low Noise, Low Drift Amplifiers - Logarithmic Amplifiers - Photocell Amplifiers - Sample and Hold...