Description
These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum
Features
- Y Y Y Y Y
Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON)
TL G 11378.
- 2 TL G 11378.
- 1
TO-92 7000 Series
TO-236 AB (SOT-23) 7002 Series
TL G 11378.
- 3
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS s 1 MX) Gate-Source Voltage Drain Current Continuous Pulsed PD Total Power Dissipation Derating above 25 C TJ TSTG TL.
NDS7000A Datasheet
