NDS7002A - N-Channel MOSFET

These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum

• Y Y Y Y Y Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G 11378.
• 2 TL G 11378.
• 1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL G 11378.
• 3 Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS s 1 MX) Gate-Source Voltage Drain Current Continuous Pulsed PD Total Power Dissipation Derating above 25 C TJ TSTG TL.