2N5397 Datasheet | National Semiconductor

Description The 2N5397 thru 2N5398 series of N channel JFETs is designed for VHF/UHF mon-source or mon- gate amplifiers, mixers and oscillators. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation (Derate 1.7 m W/°C) Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) -25V 10m A 300 m W -65° C to +200°C 300° C OJ 75-0 . 196 "' [4.445-4.953) SEATIMG PLANE 19.496-0.483) TO-72 _ Q.209-0.230 T I57309~5.8«) 0.179-0.210 In. 318-5.334) - (12.70) f MIN 9.10O ~(2~540) 0.936-Q.946 yj;>/>~_^^ 0.028-0.048 (0l914-1.1fi«)X..- y '/ y (o Tl1-1.219) PIN FET 4 Case Electrical Characteristics (25c un less otherwise noted) 'GSS SVgss ^GS(off) IDSS VGS(f) 9fs Cj ss 9fs ps PARAMETER Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current Gate-Source Forward Voltage mon-Source Forward Transconductance, (Note 1) mon-Source Output Conductance mon-Source Reverse Transfer Capacitance mon-Source Input Capacitance mon-Source Input Conductance mon-Source Output Conductance mon-Source Forward Transconductance, (Note 1) mon-Source Power Gain (Neutralized! mon-Source, Spot Noise Figure (Neutralized) CONDITIONS VQS--15V, Vds-0 Vds = o, gi = -1/JA V D S= 10V, Dl = 1 n A V DS = 10V, v D s=o VDS=0, Ig= 1 m A VDS= 10V, Id = 10 m A V DS = 10V, v G s=o Vqs= 10V, Ip = 10m A V DS = 10V, V G S=0 V D s= 10V, Id = 10m A V DS = 10V, v G s=o Vd G = 10V, Id = 10m A v D s= iov, v G s=o Vqg = 10V, Id = 10m A V D S = 10V, v G s = o V D G = 10V, Dl = 10m A VDS= 10V, v G s = o V D G = 10V, Dl = 10 m A v D s= iov, v G...