CD4001BM Datasheet | National Semiconductor

Description These quad gates are monolithic plementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors They have equal source and sink current capabilities and conform to standard B series output drive The devices also have buffered outputs which improve transfer characteristics by providing very high gain All inputs are protected against static discharge with diodes to VDD and VSS Features Y Low power TTL patibility Fan out of 2 driving 74L or 1 driving 74LS Y 5V - 10V - 15V parametric ratings Y Symmetrical output characteristics Y Maximum input leakage 1 m A at 15V over full temperature range Schematic Diagrams CD4001BC BM of device shown Je Aa B Logical ‘‘1’’ e High Logical ‘‘0’’ e Low TL F 5939 - 1 C1995 National Semiconductor Corporation TL F 5939 TL F 5939 - 5 TL F 5939 - 2 All inputs protected by standard CMOS protection circuit CD4011BC BM of device shown Je AB Logical ‘‘1’’ e High Logical ‘‘0’’ e Low TL F 5939 - 6 All inputs protected by standard CMOS protection circuit RRD-B30M105 Printed in U S A Absolute Maximum Ratings (Notes 1 and 2) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Voltage at any Pin Power Dissipation (PD) Dual-In-Line Small Outline b0 5V to VDD a0 5V 700 m W 500 m W VDD Range Storage Temperature (TS) Lead Temperature (TL) (Soldering 10 seconds) b0 5 VDC to a18 VDC b65 C to a150 C 260 C Operating Conditions Operating Range (VDD) Operating Temperature Range CD4001BM CD4011BM CD4001BC CD4011BC 3 VDC to 15 VDC b55 C to a125 C b40 C to a85...