DS90CR218A
DS90CR218A is +3.3V Rising Edge Data Strobe LVDS manufactured by National Semiconductor.
Description
The DS90CR217 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fourth LVDS link. Every cycle of the transmit clock 21 bits of input data are sampled and transmitted. The DS90CR218A receiver converts the three LVDS data streams back into 21 bits of CMOS/TTL data. At a transmit clock frequency of 85 MHz, 21 bits of TTL data are transmitted at a rate of 595 Mbps per LVDS data channel. Using a 85 MHz clock, the data throughput is 1.785 Gbit/s (223 Mbytes/sec). This chipset is an ideal means to solve EMI and cable size problems associated with wide, high speed TTL interfaces.
Features n n n n n n n n n n n n n 20 to 85 MHz shift clock support 50% duty cycle on receiver output clock Best- in- Class Set & Hold Times on Tx INPUTs Low power consumption ± 1V mon mode range (around +1.2V) Narrow bus reduces cable size and cost Up to 1.785 Gbps throughput Up to 223 Megabytes/sec bandwidth 345 m V (typ) swing LVDS devices for low EMI PLL requires no external ponents Rising edge data strobe patible with TIA/EIA-644 LVDS standard Low profile 48-lead TSSOP package
Block Diagrams
DS90CR217 DS90CR218A
DS101080-1
DS101080-27
Order Number DS90CR217MTD See NS Package Number MTD48
Order Number DS90CR218AMTD See NS Package Number MTD48
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© 1999 National Semiconductor Corporation
DS101080
.national.
DS90CR218A/DS90CR217
Pin Diagrams
DS101080-21
DS101080-22
DS90CR217
Typical Application
DS101080-23
.national.
DS90CR218A/DS90CR217
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (VCC)
- 0.3V to +4V CMOS/TTL Input Voltage
- 0.5V to (VCC + 0.3V) CMOS/TTL Output Voltage
- 0.3V...