LF412 Datasheet | National Semiconductor

Description These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF412 dual is pin patible with the LM1558, allowing designers to immediately upgrade the overall performance of existing designs. These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth. Features n n n n n n n n n n n Internally trimmed offset voltage: 1 m V (max) Input offset voltage drift: 10 µV/˚C (max) Low input bias current: 50 p A Low input noise current: Wide gain bandwidth: 3 MHz (min) High slew rate: 10V/µs (min) Low supply current: 1.8 m A/Amplifier High input impedance: 1012Ω Low total harmonic distortion ≤0.02% Low 1/f noise corner: 50 Hz Fast settling time to 0.01%: 2 µs Typical Connection Connection Diagrams Metal Can Package 00565642 00565641 Ordering Information LF412XYZ X indicates electrical grade Y indicates temperature range “M” for military “C” for mercial Z indicates package type “H” or “N” Order Number LF412MH, LF412CH or LF412MH/883 (Note 1) See NS Package Number H08A Dual-In-Line Package Order Number LF412ACN, LF412CN or LF412MJ/883 (Note 1) See NS Package Number J08A or N08E BI-FET II™ is a trademark of National Semiconductor Corporation. © 2004 National Semiconductor Corporation DS005656 .national. Simplified Schematic 1/2 Dual Note 1: Available per JM38510/11905 Detailed Schematic .national. Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the...