LM102 Datasheet | National Semiconductor

Description The LM102 series are high-gain operational amplifiers designed specifically for unity-gain voltage follower applications Built on a single silicon chip the devices incorporate advanced processing techniques to obtain very low input current and high input impedance Further the input transistors are operated at zero collector-base voltage to virtually eliminate high temperature leakage currents It can therefore be operated in a temperature stabilized ponent oven to get extremely low input currents and low offset voltage drift The LM102 which is designed to operate with supply voltages between g 12V and g 15V also features low input capacitance as well as excellent small signal and large signal frequency response all of which minimize high frequency gain error Because of the low wiring capacitances inherent in monolithic construction this fast operation can be realized without increasing power consumption Features Y Y Y Y Y Fast slewing 10V ms Low input current 10 n A (max) High input resistance 10 000 MX No external frequency pensation required Simple offset balancing with optional 1 k X potentiometer Plug-in replacement for both the LM101 and LM709 in voltage follower applications Schematic Diagram TL H 7753 - 1 C1995 National Semiconductor Corporation TL H 7753 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 6) g 18V Supply Voltage Power Dissipation (Note 1) Input Voltage (Note 2) Output Short Circuit Duration (Note 3) 500 m W g 15V Indefinite Operating Free Air Temperature Range b 55 C to a 125 LM102 LM302 0 C to a 70 b 65 C to a 150 Storage Temperature Range Lead Temperature (Soldering 10 sec ) 300 ESD rating to be determined C C C C Electrical Characteristics (Note 4) Parameter Input Offset Voltage Input Bias Current Input Resistance Input Capacitance Large Signal Voltage...