LM3080 Datasheet | National Semiconductor

Description The LM3080 is a programmable transconductance block intended to fulfill a wide variety of variable gain applications The LM3080 has differential inputs and high impedance push-pull outputs The device has high input impedance and its transconductance (gm) is directly proportional to the amplifier bias current (IABC) High slew rate together with programmable gain make the LM3080 an ideal choice for variable gain applications such as sample and hold multiplexing filtering and multiplying The LM3080N and LM3080AN are guaranteed from 0 C to a 70 C Features Y Y Y Y Y Slew rate (unity gain pensated) 50 V ms Fully adjustable gain 0 to gm RL limit Extended gm linearity 3 decades Flexible supply voltage range g 2V to g 18V Adjustable power consumption Schematic and Connection Diagrams TL H 7148 - 1 Dual-In-Line Package TL H 7148 - 2 Top View Order Number LM3080AN LM3080M or LM3080N See NS Package Number M08A or N08E C1995 National Semiconductor Corporation TL H 7148 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage (Note 2) LM3080 LM3080A Power Dissipation Differential Input Voltage g 18V g 22V Amplifier Bias Current (IABC) DC Input Voltage Output Short Circuit Duration Operating Temperature Range LM3080N or LM3080AN Storage Temperature Range Lead Temperature (Soldering 10 sec ) 2 m A a VS to b VS Indefinite 0 C to a 70 C b 65 C to a 150 C 250 m W g 5V 260 C Electrical Characteristics (Note 1) Parameter Input Offset Voltage Over Specified Temperature Range IABC e 5 m A Input Offset Voltage Change Input Offset Current Input Bias Current Over Specified Temperature Range Forward Transconductance (gm) Over Specified Temperature Range Peak Output Current RL e 0 IABC e 5 m A RL e 0 RL e 0 Over Specified Temperature Range RL e % 5 m A s IABC s 500 m A RL e % 5 m A s IABC s 500 m A 6700...