NM27C512 Datasheet | National Semiconductor

Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM) It is manufactured using National’s proprietary 0 8 micron CMOS AMGTM EPROM technology for an excellent bination of speed and economy while providing excellent reliability The NM27C512 provides microprocessor-based systems storage capacity for portions of operating system and application software Its 90 ns access time provides nowait-state operation with high-performance CPUs The NM27C512 offers a single chip solution for the code storage requirements of 100% firmware-based equipment Frequently-used software routines are quickly executed from EPROM storage greatly enhancing system utility The NM27C512 is configured in the standard JEDEC EPROM pinout which provides an easy upgrade path for systems which are currently using standard EPROMs The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit Features High performance CMOS 90 ns access time Fast turn-off for microprocessor patibility Manufacturers identification code JEDEC standard pin configuration 28-pin DIP package 32-pin chip carrier Block Diagram TL D 10834 - 1 TRI-STATE is a registered trademark of National Semiconductor Corporation NSC800TM is a trademark of National Semiconductor Corporation AMGTM is a trademark of WSI Inc C1995 National Semiconductor Corporation TL D 10834 RRD-B30M65 Printed in U S A Connection Diagrams 27C080 27C040 27C020 27C010 27C256 A19 XX VPP XX VPP XX VPP A16 A16 A16 A16 A15 A15 A15 A15 VPP A12 A12 A12 A12 A12 A7 A7 A7 A7 A7 A6 A6 A6 A6 A6 A5 A5 A5 A5 A5 A4 A4 A4 A4 A4 A3 A3 A3 A3 A3 A2 A2 A2 A2 A2 A1 A1 A1 A1 A1 A0 A0 A0 A0 A0 O0 O0 O0 O0 O0 O1 O1 O1 O1 O1 O2 O2 O2 O2 O2 GND GND GND GND GND DIP NM27C512 27C256 27C010 27C020 27C040 27C080 VCC VCC VCC VCC XX PGM XX PGM A18 A18 VCC XX A17 A17 A17 A14 A14 A14 A14 A14 A13 A13 A13 A13 A13 A8 A8 A8 A8 A8 A9 A9 A9 A9 A9 A11 A11 A11 A11 A11 OE OE OE OE OE VPP A10...