NV6123 Datasheet | Navitas

Features Ga NFast™ Power IC - Large cooling pad - Thermally-enhanced version of NV6113 - Enhanced thermals when using CS resistor - Monolithically-integrated gate drive - Wide VCC range (10 to 30 V) - Programmable turn-on d V/dt - 200 V/ns d V/dt immunity - 800 V Transient Voltage Rating - 650 V Continuous Voltage Rating - Low 300 mΩ resistance - Zero reverse recovery charge - ESD protection - 2 k V (HBM), 1 k V (CDM) - 2 MHz operation Small, low-profile SMT QFN - 6 x 8 mm footprint, 0.85 mm profile - Minimized package inductance Sustainability - Ro HS, Pb-free, REACH-pliant - Up to 40% energy savings vs Si solutions - System level 4kg CO2 Carbon Footprint reduction Product Reliability - 20-year limited product warranty (see Section 14 for details) 2. Topologies / Applications - AC-DC, DC-DC, DC-AC - QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D - Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, Tele 4. Typical Application Circuits 650 V Ga NFast™ Power IC QFN 6 x 8 mm Simplified schematic 3. Description The NV6123 is a thermally-enhanced version of the popular NV6113 650 V Ga NFast™ power IC, optimized for high-frequency and soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital in, power out’ high performance powertrain building block, enabling designers to create the fastest, smallest, most efficient integrated powertrain in the world. The highest d V/dt immunity, high-speed integrated drive and industry standard low-profile, low-inductance, 6 x 8 mm SMT QFN package allow designers to exploit Navitas Ga N technology with simple, quick, dependable solutions for breakthrough power density and efficiency. Navitas’ Ga NFast™ power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the mercial introduction of breakthrough designs. DCIN(+) 10V to 24V PWM...