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NV6128C
1. Features
GaNFast™ Power IC Large cooling pad Enhanced thermals when using CS resistor Monolithically-integrated gate drive Wide VCC range (10 to 30 V) Programmable turn-on dV/dt Low quiescient current consumption Source Kelvin ground 200 V/ns dV/dt immunity 800 VDS(tran), 650 VDS(cont) Voltage Ratings Low 70 mΩ resistance Zero reverse recovery charge ESD protection – 2 kV (HBM), 1 kV (CDM) 2 MHz operation Small, low-profile SMT QFN 6 x 8 mm footprint, 0.85 mm profile Minimized package inductance Sustainability • RoHS, Pb-free, REACH-compliant • Up to 40% energy savings vs Si solutions • System level 4kg CO2 Carbon Footprint reduction Product Reliability • 20-year limited product warranty
(see Section 14 for details)
2.