NV6134A
Description
This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.
Key Features
- GaNFast™ Power IC
- Monolithically-integrated gate drive
- Wide VCC range (10 to 30 V)
- Programmable turn-on dV/dt
- 200 V/ns dV/dt immunity
- 800 V Transient Voltage Rating
- 700 V Continuous Voltage Rating
- Low 260 mΩ resistance
- Zero reverse recovery charge
- 2 MHz operation GaNSense™ Technology
