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NV6136C - GaNFast Power IC

General Description

This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.

Key Features

  • GaNFast™ Power IC.
  • Monolithically-integrated gate drive.
  • Wide VCC range (10 to 30 V).
  • Programmable turn-on dV/dt.
  • 200 V/ns dV/dt immunity.
  • 800 V Transient Voltage Rating.
  • 700 V Continuous Voltage Rating.
  • Low 170 mΩ resistance.
  • Zero reverse recovery charge.
  • 2 MHz operation GaNSense™ Technology.
  • Integrated loss-less current sensing.
  • Short-circuit protection.
  • Over-temperature protection.

📥 Download Datasheet

Datasheet Details

Part number NV6136C
Manufacturer Navitas
File Size 1.86 MB
Description GaNFast Power IC
Datasheet download datasheet NV6136C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1. Features GaNFast™ Power IC • Monolithically-integrated gate drive • Wide VCC range (10 to 30 V) • Programmable turn-on dV/dt • 200 V/ns dV/dt immunity • 800 V Transient Voltage Rating • 700 V Continuous Voltage Rating • Low 170 mΩ resistance • Zero reverse recovery charge • 2 MHz operation GaNSense™ Technology • Integrated loss-less current sensing • Short-circuit protection • Over-temperature protection • Autonomous low-current standby mode • Auto-standby mode input Small, low-profile SMT QFN • 6 x 8 mm footprint, 0.