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NV6169 - Power IC

Description

This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.

Features

  • GaNFast™ Power IC.
  • Monolithically-integrated gate drive.
  • Wide VCC range (9 to 30 V).
  • Programmable turn-on dV/dt.
  • 200 V/ns dV/dt immunity.
  • 800 V Transient Voltage Rating.
  • 650 V Continuous Voltage Rating.
  • Low 45 mΩ resistance.
  • Zero reverse recovery charge.
  • 2 MHz operation GaNSense™ Technology.
  • Integrated loss-less current sensing.
  • Short-circuit protection.
  • Over-temperature protection.

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Datasheet Details

Part number NV6169
Manufacturer Navitas
File Size 2.21 MB
Description Power IC
Datasheet download datasheet NV6169 Datasheet
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Full PDF Text Transcription

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NV6169 1. Features GaNFast™ Power IC • Monolithically-integrated gate drive • Wide VCC range (9 to 30 V) • Programmable turn-on dV/dt • 200 V/ns dV/dt immunity • 800 V Transient Voltage Rating • 650 V Continuous Voltage Rating • Low 45 mΩ resistance • Zero reverse recovery charge • 2 MHz operation GaNSense™ Technology • Integrated loss-less current sensing • Short-circuit protection • Over-temperature protection • Autonomous low-current standby mode • Auto-standby mode enable input • Fault output Small, low-profile SMT QFN • 8 x 8 mm footprint, 0.
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