NV6169 Overview
Description
This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device.
Key Features
- Monolithically-integrated gate drive
- Wide VCC range (9 to 30 V)
- Programmable turn-on dV/dt
- 200 V/ns dV/dt immunity
- 800 V Transient Voltage Rating
- 650 V Continuous Voltage Rating
- Low 45 mΩ resistance
- Zero reverse recovery charge
- 2 MHz operation GaNSense™ Technology
- Integrated loss-less current sensing
