NV6512C Overview
The NV6512C is a thermally-enhanced bottomcooled SMD version of the GaNFast™ power IC family, optimized for higher power systems using GaNSafe™ technology, making it the ideal choice for high-frequency, high-power-density, and highefficiency power systems in data center, solar, industrial, and automotive segments. GaNFast power ICs integrate GaN FET(s) with gate drive to create an easy-to-use power stage building...
NV6512C Key Features
- VDS 650V continuous / 800V transient
- 55 m RDS(ON)_MAX_25C and 41 A IDS(CONTINUOUS)
- TOLL-4L thermally-enhanced, bottom-cooled
- PWM input patibility 10 to 18 V
- Paralleling capability up to 2x power ICs
- Zero reverse-recovery charge
- Turn-ON and Turn-OFF dV/dt programmability
- Up to 2 MHz operation
- Short Circuit Protection with 350 ns latency
- dV/dt immunity up to 100 V/ns