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NJG1681MD7 - HIGH POWER SPDT SWITCH GaAs MMIC

Description

LTE/UMTS/CDMA/GSM applications.

Features

  • very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 6GHz. In addition, this switch is able to handle high power signals. The NJG1681MD7 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin EQFN14-D7 package is adopted. I.

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Datasheet Details

Part number NJG1681MD7
Manufacturer New Japan Radio
File Size 270.41 KB
Description HIGH POWER SPDT SWITCH GaAs MMIC
Datasheet download datasheet NJG1681MD7 Datasheet
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NJG1681MD7 HIGH POWER SPDT SWITCH GaAs MMIC I GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 6GHz. In addition, this switch is able to handle high power signals. The NJG1681MD7 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin EQFN14-D7 package is adopted. I PACKAGE OUTLINE NJG1681MD7 I APPLICATIONS LTE, UMTS, CDMA, GSM applications IEEE802.
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