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FCH10A06 - Schottky Barrier Diode

Key Features

  • Similar to TO-220AB Case.
  • Fully Molded Isolation.
  • Dual Diodes.
  • Cathode Common.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM VRRSM IO IF(RMS) IFSM T.

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Datasheet Details

Part number FCH10A06
Manufacturer Nihon Inter Electronics Corporation
File Size 55.18 KB
Description Schottky Barrier Diode
Datasheet download datasheet FCH10A06 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S B D T y p e : FCH10A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCH10A06 60 65(pulse width ≤ 1µs duty ≤ 1/50) 10 Tc=125°C 50 Hz Full Sine Wave Resistive Load 11.1 120 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.