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FCH10A09 - Schottky Barrier Diode

Key Features

  • Similar to TO-220AB Case.
  • Fully Molded Isolation.
  • Dual Diodes.
  • Cathode Common.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCH1.

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Datasheet Details

Part number FCH10A09
Manufacturer Nihon Inter Electronics Corporation
File Size 27.37 KB
Description Schottky Barrier Diode
Datasheet download datasheet FCH10A09 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S B D T y p e : FCH10A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCH10A09 Unit 90 10 Tc=122°C 50 Hz Full Sine Wave Resistive Load V A 11.1 A 120 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.