PDMB100B12C Datasheet | Nihon Inter Electronics Corporation

IGBT MODULE CIRCUIT Dual 100A 1200V OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 320g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR 1200 +/ - 20 100 200 500 -40 to +150 -40 to +125 2500 3 2 Unit V V A W °C °C V N- m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100m A VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 6 ohm RG= 10 ohm VGE= +/- 15V Min. - Typ. 1.9 8300 0.25 0.40 0.25 0.80 Max. 2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit m A µA V V p F µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated...