PDMB100B12C2 Datasheet | Nihon Inter Electronics Corporation

IGBT MODULE Dual 100A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 220g Symbol VCES VGES IC IC PC Tj Tstg VISO FTOR 1200 +/ - 20 100 200 500 -40 to +150 -40 to +125 2500 2.04 Unit V V A W °C °C V N- m Typ. 1.9 8300 0.25 0.40 0.25 0.80 Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Mounting Torque Module Base to Heat sink Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) C ies r on f off Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100m A VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 6 ohm RG=10 ohm VGE= +/- 15V Min. - Max. 2.0 1.0 2.4 8.0 0.45 0.7 0.35 1.10 Unit m A µA V V p F µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 100 200 Unit A Characteristic...