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10EDB20 - DIODE

Key Features

  • Type : 10EDB20 1A 200V Tj =150 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DIODE FEATURES Type : 10EDB20 1A 200V Tj =150 °C OUTLINE DRAWING * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight:0.17g 10EDB20 200 50Hz Half Sine Wave Resistive Load Ta=39°C *1 Ta=26°C *2 1.0 0.9 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 45 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Symbol IRM VFM Conditions Min.