11E1 - DIODE

Nihon Inter Electronics

Key Features

Miniature Size.
Low Forward Voltage drop.
Low Reverse Leakage Current.
High Surge Capability.
26mm and 52mm Inside Tape Spacing Package Available.

11E1 diode by Nihon Inter Electronics - Datasheet Preview

Datasheet Details

Part number	11E1
Manufacturer	Nihon Inter Electronics
File Size	20.03 KB
Description	DIODE
Datasheet	11E1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
11E1	SILICON RECTIFIER DIODES	EIC
11E2	SILICON RECTIFIER DIODES	EIC
11E4	SILICON RECTIFIER DIODES	EIC
11E6	SILICON RECTIFIER DIODES	EIC
11ES1	SILICON RECTIFIER DIODES	EIC

Other Datasheets by Nihon Inter Electronics

Part Number	Description
11E2	DIODE
11EFS2	Low Forward Voltage drop Diode
11EFS4	Low Forward Voltage drop Diode
11EQ04	Schottky Barrier Diode
11EQ06	Low Forward Voltage drop Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DIODE Type : 11E1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.21g Rating Symbol 11E1 Unit Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 100 250 1.0 Ta=40°C 50Hz Half Sine Wave Resistive Load 1.