Datasheet4U Logo Datasheet4U.com

11E2 - DIODE

Features

  • Miniature Size.
  • Low Forward Voltage drop.
  • Low Reverse Leakage Current.
  • High Surge Capability.
  • 26mm and 52mm Inside Tape Spacing Package Available.

📥 Download Datasheet

Datasheet preview – 11E2

Datasheet Details

Part number 11E2
Manufacturer Nihon Inter Electronics
File Size 20.03 KB
Description DIODE
Datasheet download datasheet 11E2 Datasheet
Additional preview pages of the 11E2 datasheet.

📁 Similar Datasheet

  • 11E2 - SILICON RECTIFIER DIODES (EIC)
  • 11E1 - SILICON RECTIFIER DIODES (EIC)
  • 11E4 - SILICON RECTIFIER DIODES (EIC)
  • 11E6 - SILICON RECTIFIER DIODES (EIC)
  • 11ES1 - SILICON RECTIFIER DIODES (EIC)
  • 11ES2 - SILICON RECTIFIER DIODES (EIC)
Other Datasheets by Nihon Inter Electronics
  • 11E1 - DIODE
  • 11EFS2 - Low Forward Voltage drop Diode
  • 11EFS4 - Low Forward Voltage drop Diode
  • 11EQ04 - Schottky Barrier Diode
  • 11EQ06 - Low Forward Voltage drop Diode
  • 11EQ09 - Low Forward Voltage drop Diode
  • 11EQ10 - Low Forward Voltage drop Diode
  • 11EQS03L - Low Forward Voltage drop Diode

Full PDF Text Transcription

Click to expand full text
DIODE Type : 11E2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.21g Rating Symbol 11E2 Unit Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 200 400 1.0 Ta=40°C 50Hz Half Sine Wave Resistive Load 1.
Published: |