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11EFS2 - Low Forward Voltage drop Diode

Key Features

  • Miniature Size.
  • Ultra-Fast Recovery.
  • Low Forward Voltage Drop.
  • Low Power Loss, High Efficiency.
  • High Surge Capability.
  • 200 Volts through 400 Volts Types Available.
  • 26mm and 52mm Inside Tape Spacing.

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Other Datasheets by Nihon Inter Electronics

Part Number Description
11EFS4 Low Forward Voltage drop Diode
11E1 DIODE
11E2 DIODE
11EQ04 Schottky Barrier Diode
11EQ06 Low Forward Voltage drop Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FRD Type : 11EFS2 FEATURES * Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts through 400 Volts Types Available * 26mm and 52mm Inside Tape Spacing OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Symbol VRRM VRSM Average Rectified Output Current IO RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range IF(RMS) IFSM Tjw Tstg 11EFS2 Unit 200 220 0.8 Ta=40°C Without Fin ∗1 50Hz Half Sine 1 Ta=32°C P.C.B.Mounted∗2 WaveResistive Load 1.