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11ES2 - DIODE

Features

  • Miniature Size.
  • Low Forward Voltage drop.
  • Low Reverse Leakage Current.
  • High Surge Capability.
  • 26mm and 52mm Inside Tape Spacing Package Available.

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Datasheet preview – 11ES2

Datasheet Details

Part number 11ES2
Manufacturer Nihon Inter Electronics
File Size 20.70 KB
Description DIODE
Datasheet download datasheet 11ES2 Datasheet
Additional preview pages of the 11ES2 datasheet.

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Full PDF Text Transcription

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DIODE Type : 11ES2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 0.98 1.0 45 11ES2 200 400 Ta=25°C *1 50Hz Half Sine Ta=50°C *2 Wave Resistive Load 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 Unit V V A A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Min. Typ. Max.
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