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ESH05A15-F - Schottky Barrier Diode

Key Features

  • TO-252AA Case, Surface Mounting Device.
  • High Voltage Low leakage Current.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current.
  • 1 RMS Forward Current.
  • 1 Surge Forward Current.
  • 1 Operating JunctionTemperature Range Storage Temperature Range www. DataSheet4U. com Approx Net Weight:0.30g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Sym.

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Other Datasheets by Nihon Inter Electronics

Part Number Description
ESH05A15 Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SBD T y p e : ESH05 SH05A1515-F OULINE DRAWING FEATURES *TO-252AA Case, Surface Mounting Device *High Voltage Low leakage Current *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current *1 RMS Forward Current *1 Surge Forward Current *1 Operating JunctionTemperature Range Storage Temperature Range www.DataSheet4U.com Approx Net Weight:0.30g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Symbol IRM 130 1.6 5.0 ESH05A15-F 150 Ta=29°C *2 50 Hz half Sine Wave Resistive Load Tc=125°C 7.85 50Hz Half Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Conditions Min. Typ. Max. 1 0.