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ESH05A15 - Schottky Barrier Diode

Key Features

  • TO-251AA Case.
  • High Voltage Low leakage Current.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current.
  • 1 RMS Forward Current.
  • 1 Surge Forward Current.
  • 1 Operating JunctionTemperature Range Storage Temperature Range www. DataSheet4U. com Approx Net Weight: 0.35g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Symbol IRM 130 1.6 5.0 ESH.

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Other Datasheets by Nihon Inter Electronics

Part Number Description
ESH05A15-F Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SBD T y p e : ESH05 SH05A15 OULINE DRAWING FEATURES *TO-251AA Case *High Voltage Low leakage Current *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current *1 RMS Forward Current *1 Surge Forward Current *1 Operating JunctionTemperature Range Storage Temperature Range www.DataSheet4U.com Approx Net Weight: 0.35g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Symbol IRM 130 1.6 5.0 ESH05A15 150 Ta=29°C *2 50 Hz half Sine Wave Resistive Load Tc=125°C 7.85 50Hz Half Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Conditions Min. Typ. Max. 1 0.