M36P0R8070E0 Description
Address inputs (A0-A23) . 9 Data input/output (DQ0-DQ15) . 10 Flash Chip Enable input (EF).
M36P0R8070E0 Key Features
- 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory
- 1 die of 128 Mbit (8 Mb x16) PSRAM Supply voltage
- VDDF = VCCP = VDDQ = 1.7 to 1.95 V
- VPPF = 9 V for fast program (12 V tolerant) Electronic signature
- Manufacturer code: 20h
- Device code: 8818 Package
- ECOPACK® Synchronous/asynchronous read
- Synchronous burst read mode: 108 MHz, 66 MHz
- Asynchronous page read mode
- Random access: 93 ns