Datasheet4U Logo Datasheet4U.com

M36P0R9060E0 - 512 Mbit Flash memory 64 Mbit (Burst) PSRAM

Description

6 Signal descriptions

.

.

Features

  • Partial Array Self-Refresh (PASR).
  • Deep Power-Down (DPD) Mode.
  • Automatic Temperature-compensated SelfRefresh PSRAM.
  • Programming time.
  • 4.2µs typical Word program time using Buffer Enhanced Factory Program command www. DataSheet4U. com.
  • Memory organization.
  • Multiple Bank memory array: 64 Mbit banks.
  • Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations.
  • program/erase in one Bank while read i.

📥 Download Datasheet

Datasheet preview – M36P0R9060E0

Datasheet Details

Part number M36P0R9060E0
Manufacturer Numonyx
File Size 474.27 KB
Description 512 Mbit Flash memory 64 Mbit (Burst) PSRAM
Datasheet download datasheet M36P0R9060E0 Datasheet
Additional preview pages of the M36P0R9060E0 datasheet.

📁 Similar Datasheet

Other Datasheets by Numonyx
  • M36P0R9060N0 - 512 Mbit Flash memory 64 Mbit (Burst) PSRAM
  • M36P0R9070E0 - 512 Mbit Flash memory 128 Mbit (Burst) PSRAM
  • M36P0R8070E0 - 256 Mbit Flash memory 128 Mbit (burst) PSRAM
  • M36L0T7050B2 - (M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM
  • M36L0T7050T2 - (M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM

Full PDF Text Transcription

Click to expand full text
M36P0R9060E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 64 Mbit (4Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.
Published: |