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M36P0R9060N0 - 512 Mbit Flash memory 64 Mbit (Burst) PSRAM

General Description

6 Signal descriptions

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Key Features

  • Partial Array Self-Refresh (PASR).
  • Deep Power-Down (DPD) mode.
  • Automatic Temperature-compensated SelfRefresh.
  • Flash memory.
  • PSRAM.
  • Programming time.
  • 4.2µs typical Word program time using www. DataSheet4U. com Buffer Enhanced Factory Program command.
  • Memory organization.
  • Multiple Bank Memory Array: 64 Mbit Banks.
  • Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations.
  • progr.

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Datasheet Details

Part number M36P0R9060N0
Manufacturer Numonyx
File Size 470.75 KB
Description 512 Mbit Flash memory 64 Mbit (Burst) PSRAM
Datasheet download datasheet M36P0R9060N0 Datasheet

Full PDF Text Transcription for M36P0R9060N0 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M36P0R9060N0. For precise diagrams, and layout, please refer to the original PDF.

M36P0R9060N0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summa...

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.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 64 Mbit (4Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.

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