Datasheet Summary
M58LR128KT M58LR128KB M58LR256KT M58LR256KB
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
Preliminary Data
Features
- Supply voltage
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 1.7 V to 2.0 V for I/O buffers
- VPP = 9 V for fast program Synchronous/asynchronous read
- Synchronous burst read mode: 54 MHz, 66 MHz
- Asynchronous page read mode
- Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time
- 2.5 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple bank memory array: 8 Mbit banks for the M58LR128KT/B 16 Mbit banks for the M58LR256KT/B
- Parameter...
