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M58LR128KT Datasheet (m58lrxxxkx) 128 Or 256 Mbit 1.8 V Supply Flash Memories

Manufacturer: Numonyx

Overview: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

M58LR128KT datasheet preview

Datasheet Details

Part number	M58LR128KT
Manufacturer	Numonyx
File Size	2.03 MB
Description	(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
Datasheet	M58LR128KT M58LR256KT Datasheet (PDF)

General Description

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Key Features

Supply voltage.
VDD = 1.7 V to 2.0 V for program, erase and read.
VDDQ = 1.7 V to 2.0 V for I/O buffers.
VPP = 9 V for fast program Synchronous/asynchronous read.
Synchronous burst read mode: 54 MHz, 66 MHz.
Asynchronous page read mode.
Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time.
2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
Multipl.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	M58LR128FB	Flash Memory	ST Microelectronics
	M58LR128FT	Flash Memory	ST Microelectronics
	M58LR128GB	128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory	STMicroelectronics
	M58LR128GL	128 and 256Mbit 1.8V supply Flash memories	STMicroelectronics
	M58LR128GT	128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory	STMicroelectronics

More Datasheets from Numonyx

Part Number	Description
M58LR128KB	(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR256KB	(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR256KT	(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58BW016DB	16 Mbit 3V supply Flash memories
M58BW016DT	16 Mbit 3V supply Flash memories
M58BW016FB	16 Mbit 3V supply Flash memories
M58BW016FT	16 Mbit 3V supply Flash memories

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