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M58LR256KB - (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

Download the M58LR256KB datasheet PDF. This datasheet also covers the M58LR256KT variant, as both devices belong to the same (m58lrxxxkx) 128 or 256 mbit 1.8 v supply flash memories family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 1.7 V to 2.0 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous/asynchronous read.
  • Synchronous burst read mode: 54 MHz, 66 MHz.
  • Asynchronous page read mode.
  • Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time.
  • 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multipl.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M58LR256KT_Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number M58LR256KB
Manufacturer Numonyx
File Size 2.03 MB
Description (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
Datasheet download datasheet M58LR256KB Datasheet

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Other Datasheets by Numonyx

Part Number Description
M58LR256KT (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR128KB (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR128KT (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58BW016DB 16 Mbit 3V supply Flash memories
M58BW016DT 16 Mbit 3V supply Flash memories

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 54 MHz, 66 MHz – Asynchronous page read mode – Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time – 2.