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M58LR256KT - (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 1.7 V to 2.0 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous/asynchronous read.
  • Synchronous burst read mode: 54 MHz, 66 MHz.
  • Asynchronous page read mode.
  • Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time.
  • 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multipl.

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Datasheet Details

Part number M58LR256KT
Manufacturer Numonyx
File Size 2.03 MB
Description (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
Datasheet download datasheet M58LR256KT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 54 MHz, 66 MHz – Asynchronous page read mode – Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time – 2.