M58LR256KT Description
13 Data inputs/outputs (DQ0-DQ15).
M58LR256KT Key Features
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 1.7 V to 2.0 V for I/O buffers
- VPP = 9 V for fast program Synchronous/asynchronous read
- Synchronous burst read mode: 54 MHz, 66 MHz
- Asynchronous page read mode
- Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time
- 2.5 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple bank memory array: 8 Mbit banks for the M58LR128KT/B 16 Mbit banks for the M58LR256KT/B
- Parameter blocks (top or bottom location) Dual operations
- Program/erase in one bank while read in others