Datasheet4U Logo Datasheet4U.com

NAND512R3A2D - SLC NAND flash memories

Datasheet Summary

Description

.

.

.

.

.

.

.

Features

  • High density SLC NAND flash memories.
  • 512 Mbit memory array.
  • Cost effective solutions for mass storage.

📥 Download Datasheet

Datasheet preview – NAND512R3A2D

Datasheet Details

Part number NAND512R3A2D
Manufacturer Numonyx
File Size 725.64 KB
Description SLC NAND flash memories
Datasheet download datasheet NAND512R3A2D Datasheet
Additional preview pages of the NAND512R3A2D datasheet.

📁 Similar Datasheet

  • NAND512R3A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND512R4A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND512-A - 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories (STMicroelectronics)
  • NAND512-B - NAND Flash Memory (STMicroelectronics)
  • NAND512-M - (NANDxxx-M) NAND Flash Memories (ST Microelectronics)
  • NAND512W3A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND512W4A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND01G-A - 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories (STMicroelectronics)
  • NAND01G-B - (NAND0xG-B) NAND Flash Memory (ST Microelectronics)
  • NAND01G-B2B - (NAND0xG-B2x) NAND Flash Memory (ST Microelectronics)
Other Datasheets by Numonyx

Full PDF Text Transcription

Click to expand full text
NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features „ High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications „ NAND interface – x8 or x16 bus width – Multiplexed address/data „ Supply voltage: 1.8 V, 3 V „ Page size – x8 device: (512 + 16 spare) bytes – x16 device: (256 + 8 spare) words „ Block size – x8 device: (16 K + 512 spare) bytes – x16 device: (8 K + 256 spare) words „ Page read/program – Random access: 12 µs (3 V)/15 µs (1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) – Page program time: 200 µs (typ) „ Copy back program mode „ Fast block erase: 1.
Published: |