NAND512W4A2D
Overview
- High density SLC NAND flash memories - 512 Mbit memory array - Cost effective solutions for mass storage applications
- NAND interface - x8 or x16 bus width - Multiplexed address/data
- Supply voltage: 1.8 V, 3 V
- Page size - x8 device: (512 + 16 spare) bytes - x16 device: (256 + 8 spare) words
- Block size - x8 device: (16 K + 512 spare) bytes - x16 device: (8 K + 256 spare) words
- Page read/program - Random access: 12 µs (3 V)/15 µs (1.8 V) (max) - Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) - Page program time: 200 µs (typ)
- Copy back program mode
- Fast block erase: 1.5 ms (typ)
- Status register
- Electronic signature
