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NAND512W4A2S - NAND SLC small page 70 nm Discrete

This page provides the datasheet information for the NAND512W4A2S, a member of the NAND512W3A2S NAND SLC small page 70 nm Discrete family.

Datasheet Summary

Features

  • Density.
  • 512 Mbit: 4096 blocks.
  • NAND Flash interface.
  • x8 or x16 bus width.
  • Multiplexed address/data.
  • Memory configuration.
  • Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words.
  • Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words.
  • Supply voltage: 1.8 V, 3 V.
  • Read/write performance.
  • Random access: 12 µs (3 V)/15 µs(1.8 V) (max).
  • Sequential access: 30 ns (.

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Datasheet preview – NAND512W4A2S

Datasheet Details

Part number NAND512W4A2S
Manufacturer Numonyx
File Size 710.02 KB
Description NAND SLC small page 70 nm Discrete
Datasheet download datasheet NAND512W4A2S Datasheet
Additional preview pages of the NAND512W4A2S datasheet.

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Full PDF Text Transcription

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Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Flash interface – x8 or x16 bus width – Multiplexed address/data  Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words  Supply voltage: 1.8 V, 3 V  Read/write performance – Random access: 12 µs (3 V)/15 µs(1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min) – Page program time: 200 µs (typ) – Block erase time: 2 ms (typ) – Programming performance (typ): x8 device: 2.3 MByte/s x16 device: 2.
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