NAND512W4A2S
Overview
- Density - 512 Mbit: 4096 blocks
- NAND Flash interface - x8 or x16 bus width - Multiplexed address/data
- Memory configuration - Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words - Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words
- Supply voltage: 1.8 V, 3 V
- Read/write performance - Random access: 12 µs (3 V)/15 µs(1.8 V) (max) - Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min) - Page program time: 200 µs (typ) - Block erase time: 2 ms (typ) - Programming performance (typ): x8 device: 2.3 MByte/s x16 device: 2.4 MByte/s
- Additional features - Copy back program mode - Error correction code models - Bad blocks management and wear leveling algorithms - Hardware simulation models
- Quality and reliability - 100,000 program/erase cycles (with ECC) - 10 years data retenti
