MD56V62160 Overview
The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL patible.
MD56V62160 Key Features
- Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank
- 1,048,576-word
- 16-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL patible Output : LVTTL patible Refresh : 4096 c
- CAS latency (2, 3)
- Burst length (2, 4, 8)
- Data scramble (sequential, interleave)
- CBR auto-refresh, Self-refresh capability
- Package: 54-pin 400 mil plastic TSOP (Type II) (TSOPII54-P-400-0.80-K) (Product : MD56V62160/H-xxTA) xx indicates speed
